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Central Semiconductor corp. Transistor (BJT) - Discrete 2N2222A TO 18 No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 18
Type
NPN
Collector current
800 mA
Collector emitter voltage U(CEO)
40 V
Power (max) P(TOT)
500 mW
Datasheet (PDF)
476 Piece(s)
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Technical specifications
- Type
2N2222A
- Enclosure
TO 18
- Manufacturer
Central Semiconductor corp.
- Manuf. code
CSC
- Channels
1
- Type
NPN
- Collector current
800 mA
- Collector emitter voltage U(CEO)
40 V
- Collector-emitter saturation voltage (max.)
1 V
- Collector cutoff current
10 nA
- Power (max) P(TOT)
500 mW
- DC current gain (hFE)
100
- DC current gain hFE - reference current
150 mA
- DC current gain hFE - reference voltage
10 V
- Transit frequency f(T)
300 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 1359807 Central Semiconductor corp. Transistor (BJT) - Discrete 2N2222A TO 18 No. of channels 1 NPN