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Infineon Technologies IRFB3077PBF MOSFET 1 N-channel 370 W TO 220AB
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
N-channel
Power (max) P(TOT)
370 W
R(DS)(on)
3.3 mΩ
R(DS)(on) reference current
75 A
Datasheet (PDF)
41 Piece(s)
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Quantity (Piece(s))
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Package size (plus VAT.)
1
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€ 2.76
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€ 2.55
25
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€ 2.48
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Technical specifications
- Type
IRFB3077PBF
- Enclosure
TO 220AB
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
75 V
- Power (max) P(TOT)
370 W
- R(DS)(on)
3.3 mΩ
- R(DS)(on) reference current
75 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
220 nC
- Q(G) reference voltage
10 V
- C(ISS)
9400 pF
- C(ISS) reference voltage
50 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
75 V
- Channels
1
- Content
1 pc(s)
- I(d)
120 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 160923 Infineon Technologies IRFB3077PBF MOSFET 1 N-channel 370 W TO 220AB
User & Safety Instructions
User & Safety Instructions 160923 Infineon Technologies IRFB3077PBF MOSFET 1 N-channel 370 W TO 220AB