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Infineon Technologies Transistor (BJT) - Discrete BC847CW SOT 323 3 No. of channels 1 NPN
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Part number:
Item no:
Enclosure
SOT 323 3
Type
NPN
Collector current
100 mA
Collector emitter voltage U(CEO)
45 V
Power (max) P(TOT)
250 mW
Datasheet (PDF)
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Technical specifications
- Type
BC847CW
- Enclosure
SOT 323 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
NPN
- Collector current
100 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
600 mV
- Collector cutoff current
15 nA
- Power (max) P(TOT)
250 mW
- DC current gain (hFE)
420
- DC current gain hFE - reference current
2 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
250 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 153197 Infineon Technologies Transistor (BJT) - Discrete BC847CW SOT 323 3 No. of channels 1 NPN
Description
NPN transistor (8 mm tape)