Buy Vishay Avalanche diode BYG22D-E3/TR Enclosure type (semiconductors) DO 214AC Reverse voltage U(R) 200 V Forward current

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Forward voltage U(F)

1.1 V

Enclosure

DO 214AC

Mounting type

Surface-mount

Forward current I(F)

2 A

Reverse voltage U(R)

200 V

Datasheet (PDF)

1742 Piece(s)

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Technical specifications

Type: BYG22D-E3/TR

Manufacturer: Vishay

Manuf. code: VIS

Forward voltage U(F): 1.1 V

Forward voltage reference: 2 A

Operating temperature (min.): -55 °C

Operating temperature (max.): +150 °C

Enclosure: DO 214AC

Mounting type: Surface-mount

Forward current I(F): 2 A

Reverse leakage current I(r): 1 µA

Reverse leakage current I(r) reference: 200 V

Reverse recovery time T(rr): 25 ns

Reverse voltage U(R): 200 V

Product type: Avalanche diode

Variants(All information is without VAT, plus shipping costs)

Enclosure

Forward voltage U(F)

Forward current I(F)

Reverse voltage U(R)

Mounting type

Vishay Avalanche diode BYG22D-E3/TR Enclosure type (semiconductors) DO 214AC Reverse voltage U(R) 200 V Forward current I(F) 2 A

Item no:564941

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DO 214AC

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600 V

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1.5 A

1000 V

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Item no:564943

DO 214AC

1.7 V

1.5 A

1000 V

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Item no:564965

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3.5 A

200 V

Through-hole

Documents & Downloads

Datasheet

Datasheet 564941 Vishay Avalanche diode BYG22D-E3/TR Enclosure type (semiconductors) DO 214AC Reverse voltage U(R) 200 V Forward current

User & Safety Instructions

User & Safety Instructions 564941 Vishay Avalanche diode BYG22D-E3/TR Enclosure type (semiconductors) DO 214AC Reverse voltage U(R) 200 V Forward current

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