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Diotec Transistor (BJT) - Discrete BC817-40-AQ SOT 23 NPN
EAN:
Part number:
Item no:
Enclosure
SOT 23
Type
NPN
Collector current
800 mA
Collector emitter voltage U(CEO)
45 V
Power (max) P(TOT)
0.31 W
Datasheet (PDF)
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Technical specifications
- Type SMDSOT-23 housingCollector emitter voltage - VCEO 45 VDC collector current - IC: 800 mAPolarity - pin: NPNJunction temperature - Tjmax 150 °CPower loss - Ptot 0,310 W.Collector base current ratio - hfe: 400VCE 1 VIC 100 mACollector saturation voltage - VCEsat 700 mVIC 500 mAIB 50 mATransit frequency - ft:100 MHzIC 10 mAVCE 5 VF 50 MHz
- Type
BC817-40-AQ
- Enclosure
SOT 23
- Manufacturer
Diotec
- Type
NPN
- Collector current
800 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
700 mV
- Power (max) P(TOT)
0.31 W
- DC current gain (hFE)
400
- Transit frequency f(T)
50 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 2809199 Diotec Transistor (BJT) - Discrete BC817-40-AQ SOT 23 NPN