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Diotec Transistor (BJT) - Discrete BC817BPN SOT 26 NPN , PNP
EAN:
Part number:
Item no:
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 26
Type
NPN
PNP
Collector current
500 mA
Collector emitter voltage U(CEO)
45 V
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
750
-
€ 0.05754
2250
9% = € 0.01
€ 0.05229
3750
13% = € 0.01
€ 0.05020
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 750
Total (€ 0.05754 / piece)
€ 43.16
plus VAT.
14-day return policy included
Technical specifications
- Type SMDSOT-26 housingCollector emitter voltage - VCEO 45 VDC collector current - IC: 500 mAPolarity - pin NPN+PNPJunction temperature - Tjmax 150 °CPower loss - Ptot 0,300 W.Collector base current ratio - hfe: 280VCE 1 VIC 100 mACollector saturation voltage - VCEsat 700 mVIC 500 mAIB 50 mATransit frequency - ft:90 MHzIC 10 mAVCE 5 VF 100 MHz
- Type
BC817BPN
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 26
- Manufacturer
Diotec
- Type
NPN
PNP
- Collector current
500 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
700 mV
- Power (max) P(TOT)
0.3 W
- DC current gain (hFE)
280
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- UKCA
yes
Documents & Downloads
Datasheet
Datasheet 2809202 Diotec Transistor (BJT) - Discrete BC817BPN SOT 26 NPN , PNP
User & Safety Instructions
User & Safety Instructions 2809202 Diotec Transistor (BJT) - Discrete BC817BPN SOT 26 NPN , PNP