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Diotec Transistor (BJT) - Discrete BC847PN SOT 363 NPN , PNP
Part number:
Item no:
Enclosure
SOT 363
Type
NPN
PNP
Collector current
100 mA
Collector emitter voltage U(CEO)
45 V
Power (max) P(TOT)
0.2 W
Datasheet (PDF)
Sales and shipping:
Quantity (Piece(s))
Savings
Package size (plus VAT.)
750
-
€ 0.04341
2250
9% = € 0.00
€ 0.03945
3750
13% = € 0.01
€ 0.03787
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 750
Total (€ 0.04341 / piece)
€
Technical specifications
- Type SMDSOT-363 housingCollector emitter voltage - VCEO 45 VDC collector current - IC: 100 mAPolarity - pin NPN+PNPJunction temperature - Tjmax 150 °CPower loss - Ptot 0,200 W.Collector base current ratio - hfe: 300VCE 1 VIC 10 mACollector saturation voltage - VCEsat 300 mVIC 50 mAIB 5 mATransit frequency - ft:300 MHzIC 10 mAVCE 20 VF 100 MHz
- Type
BC847PN
- Enclosure
SOT 363
- Manufacturer
Diotec
- Type
NPN
PNP
- Collector current
100 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
300 mV
- Power (max) P(TOT)
0.2 W
- DC current gain (hFE)
300
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 2809236 Diotec Transistor (BJT) - Discrete BC847PN SOT 363 NPN , PNP