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Diotec Transistor (BJT) - Discrete BC856S SOT 363 PNP
Part number:
Item no:
Enclosure
SOT 363
Type
PNP
Collector current
100 mA
Collector emitter voltage U(CEO)
65 V
Power (max) P(TOT)
0.31 W
Datasheet (PDF)
Sales and shipping:
Quantity (Piece(s))
Savings
Package size (plus VAT.)
750
-
€ 0.03571
2250
9% = € 0.00
€ 0.03246
3750
13% = € 0.00
€ 0.03116
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 750
Total (€ 0.03571 / piece)
€
Technical specifications
- Type
BC856S
- Enclosure
SOT 363
- Manufacturer
Diotec
- Type
PNP
- Collector current
100 mA
- Collector emitter voltage U(CEO)
65 V
- Collector-emitter saturation voltage (max.)
600 mV
- Power (max) P(TOT)
0.31 W
- DC current gain (hFE)
350
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 2809273 Diotec Transistor (BJT) - Discrete BC856S SOT 363 PNP