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Infineon Technologies BSS123NH MOSFET 1 N-channel 500 mW TO 236 3
EAN:
Part number:
Item no:
Enclosure
TO 236 3
Type
N-channel
Power (max) P(TOT)
500 mW
R(DS)(on)
6 Ω
R(DS)(on) reference current
190 mA
Datasheet (PDF)
Number
Minimum order quantity: 20
Total (€ 0.07 / piece)
€ 1.40
plus VAT.
Technical specifications
- Type
BSS123NH
- Enclosure
TO 236 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
100 V
- Power (max) P(TOT)
500 mW
- R(DS)(on)
6 Ω
- R(DS)(on) reference current
190 mA
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
1.8 V
- U(GS)(th) reference current (max.)
13 µA
- Q(G)
0.9 nC
- Q(G) reference voltage
10 V
- C(ISS)
20.9 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
OptiMOS™
- Operating temperature (max.)
+150 °C
- Transistor property
Logic level gate
- U(DSS)
100 V
- Channels
1
- Content
1 pc(s)
- Type
N channel
- I(d)
190 mA
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 152902 Infineon Technologies BSS123NH MOSFET 1 N-channel 500 mW TO 236 3
User & Safety Instructions
User & Safety Instructions 152902 Infineon Technologies BSS123NH MOSFET 1 N-channel 500 mW TO 236 3
Description
N channel, enhancement type