Buy Infineon Technologies IKW25N120T2FKSA1 IGBT TO 247 1200 V Tube | Conrad Electronic

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A black transistor labelled 'K25T120', with three metal terminals at the bottom and a circular opening at the top for mounting purposes.

Image similar

A black transistor labelled 'K25T120', with three metal terminals at the bottom and a circular opening at the top for mounting purposes.

Image similar

Packaging type

Tube

Product type

IGBT

Enclosure

TO 247

Collector current

50 A

Mounting type

Through-hole

Datasheet (PDF)

English

Infineon Technologies

Fast track dispatch on Mon, 5 Oct

3 Piece(s)

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Technical specifications

(UGE(th)) Gate emitter threshold voltage 5.8 V
(ICpulse) Pulsed collector current: 100 A.

Packaging type: Tube

Type: IKW25N120T2FKSA1

Product type: IGBT

Enclosure: TO 247

Manufacturer: Infineon Technologies

Collector emitter reverse voltage U(CES): 1200 V

Collector current: 50 A

On delay (t(d)(on): 27 ns

Off delay t(d)(off)(2): 265 ns

Mounting type: Through-hole

UKCA: yes

Documents & Downloads

Datasheet

English

Datasheet 3027156 Infineon Technologies IKW25N120T2FKSA1 IGBT TO 247 1200 V Tube