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Infineon Technologies IRF1010E MOSFET 1 N-channel 200 W TO 220
EAN:
Part number:
Item no:
Enclosure
TO 220
Type
N-channel
Power (max) P(TOT)
200 W
R(DS)(on)
12 mΩ
R(DS)(on) reference current
50 A
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
3
-
€ 1.50
10
7% = € 0.11
€ 1.39
25
11% = € 0.16
€ 1.34
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 3
Total (€ 1.50 / piece)
€ 4.50
plus VAT.
Technical specifications
- Type
IRF1010E
- Enclosure
TO 220
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
60 V
- Power (max) P(TOT)
200 W
- R(DS)(on)
12 mΩ
- R(DS)(on) reference current
50 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
130 nC
- Q(G) reference voltage
10 V
- C(ISS)
3210 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
60 V
- Channels
1
- Content
1 pc(s)
- Type
N channel
- I(d)
84 A
- Description
60 V/81 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 162358 Infineon Technologies IRF1010E MOSFET 1 N-channel 200 W TO 220
User & Safety Instructions
User & Safety Instructions 162358 Infineon Technologies IRF1010E MOSFET 1 N-channel 200 W TO 220