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Infineon Technologies IRF1010NPBF MOSFET 1 N-channel 180 W TO 220
EAN:
Part number:
Item no:
Product type
MOSFET
Enclosure
TO 220
Type
N-channel
Power (max) P(TOT)
180 W
R(DS)(on)
11 mΩ
Datasheet (PDF)
Total (€ 0.70 / piece)
€ 0.70
plus VAT.
14-day return policy included
Technical specifications
- Type
IRF1010NPBF
- Product type
MOSFET
- Enclosure
TO 220
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- I(d)
85 A
- UBR DSS
55 V
- Power (max) P(TOT)
180 W
- R(DS)(on)
11 mΩ
- R(DS)(on) reference current
43 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
120 nC
- Q(G) reference voltage
10 V
- C(ISS)
3210 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
55 V
- Channels
1
- RoHS-compliant
- Content
1 pc(s)
- Type
N channel
- Description
55 V/85 A.
Documents & Downloads
Datasheet
Datasheet 162362 Infineon Technologies IRF1010NPBF MOSFET 1 N-channel 180 W TO 220
User & Safety Instructions
User & Safety Instructions 162362 Infineon Technologies IRF1010NPBF MOSFET 1 N-channel 180 W TO 220
Description
A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer SIE = INF, HAR = FSC, MOT = ONS.