Image similar
Image similar
Infineon Technologies IRF1310NPBF MOSFET 1 N-channel 160 W TO 220AB
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
N-channel
Power (max) P(TOT)
160 W
R(DS)(on)
36 mΩ
R(DS)(on) reference current
22 A
Datasheet (PDF)
Number
Total (€ 0.60 / piece)
€ 0.60
plus VAT.
Technical specifications
- Type
IRF1310NPBF
- Enclosure
TO 220AB
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
100 V
- Power (max) P(TOT)
160 W
- R(DS)(on)
36 mΩ
- R(DS)(on) reference current
22 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
110 nC
- Q(G) reference voltage
10 V
- C(ISS)
1900 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
100 V
- Channels
1
- Content
1 pc(s)
- Type
N channel
- I(d)
42 A
- Description
100 V/42 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 162368 Infineon Technologies IRF1310NPBF MOSFET 1 N-channel 160 W TO 220AB
User & Safety Instructions
User & Safety Instructions 162368 Infineon Technologies IRF1310NPBF MOSFET 1 N-channel 160 W TO 220AB
Description
A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer SIE = INF, HAR = FSC, MOT = ONS.