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Infineon Technologies IRF630N MOSFET 1 N-channel 82 W TO 263 3
EAN:
Part number:
Item no:
Enclosure
TO 263 3
Type
N-channel
Power (max) P(TOT)
82 W
R(DS)(on)
300 mΩ
R(DS)(on) reference current
5.4 A
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
3
-
€ 0.56
9
7% = € 0.04
€ 0.52
15
11% = € 0.06
€ 0.50
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Number
Minimum order quantity: 3
Total (€ 0.56 / piece)
€ 1.68
plus VAT.
Technical specifications
- Type
IRF630N
- Enclosure
TO 263 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
200 V
- Power (max) P(TOT)
82 W
- R(DS)(on)
300 mΩ
- R(DS)(on) reference current
5.4 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
35 nC
- Q(G) reference voltage
10 V
- C(ISS)
575 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
200 V
- Channels
1
- Content
1 pc(s)
- Type
N channel
- I(d)
9.3 A
- Description
200 V/9.3 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 162421 Infineon Technologies IRF630N MOSFET 1 N-channel 82 W TO 263 3
User & Safety Instructions
User & Safety Instructions 162421 Infineon Technologies IRF630N MOSFET 1 N-channel 82 W TO 263 3
Description
A MOSFET transistor is a voltage controlled component and can be directly connected to high-resistance sources. It is, therefore, suited for use as a switch or an analogue amplifier. This transistor is µC, TTL and CMOS compatible. Note: manufacturer SIE = INF, HAR = FSC, MOT = ONS.