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Infineon Technologies IRF7403 MOSFET 1 N-channel 2.5 W SOIC 8
EAN:
Part number:
Item no:
Enclosure
SOIC 8
Type
N-channel
Power (max) P(TOT)
2.5 W
R(DS)(on)
22 mΩ
R(DS)(on) reference current
4 A
Datasheet (PDF)
Technical specifications
- Type
IRF7403
- Enclosure
SOIC 8
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
30 V
- Power (max) P(TOT)
2.5 W
- R(DS)(on)
22 mΩ
- R(DS)(on) reference current
4 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
1 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
57 nC
- Q(G) reference voltage
10 V
- C(ISS)
1200 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
HEXFET®
- Operating temperature (max.)
+150 °C
- Transistor property
Standard
- U(DSS)
30 V
- Channels
1
- RoHS-compliant
- Content
1 pc(s)
- Type
N channel
- I(d)
8.5 A
- Description
30 V/8.5 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 162465 Infineon Technologies IRF7403 MOSFET 1 N-channel 2.5 W SOIC 8
User & Safety Instructions
User & Safety Instructions 162465 Infineon Technologies IRF7403 MOSFET 1 N-channel 2.5 W SOIC 8