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Infineon Technologies IRF8010PBF MOSFET 1 N-channel 260 W TO 220AB
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
N-channel
Power (max) P(TOT)
260 W
R(DS)(on)
15 mΩ
R(DS)(on) reference current
45 A
Datasheet (PDF)
Number
Total (€ 1.08 / piece)
€
Technical specifications
- Type
IRF8010PBF
- Enclosure
TO 220AB
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
100 V
- Power (max) P(TOT)
260 W
- R(DS)(on)
15 mΩ
- R(DS)(on) reference current
45 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
120 nC
- Q(G) reference voltage
10 V
- C(ISS)
3830 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
100 V
- Channels
1
- RoHS-compliant
- Content
1 pc(s)
- I(d)
80 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 564010 Infineon Technologies IRF8010PBF MOSFET 1 N-channel 260 W TO 220AB
User & Safety Instructions
User & Safety Instructions 564010 Infineon Technologies IRF8010PBF MOSFET 1 N-channel 260 W TO 220AB