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Infineon Technologies IRFB4110PBF MOSFET 1 N-channel 370 W TO 220AB
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
N-channel
Power (max) P(TOT)
370 W
R(DS)(on)
4.5 mΩ
R(DS)(on) reference current
75 A
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 3.61
10
7% = € 0.27
€ 3.34
25
11% = € 0.38
€ 3.23
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Number
Total (€ 3.61 / piece)
€ 3.61
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Technical specifications
- Type
IRFB4110PBF
- Enclosure
TO 220AB
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
100 V
- Power (max) P(TOT)
370 W
- R(DS)(on)
4.5 mΩ
- R(DS)(on) reference current
75 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
210 nC
- Q(G) reference voltage
10 V
- C(ISS)
9620 pF
- C(ISS) reference voltage
50 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
100 V
- Channels
1
- Content
1 pc(s)
- I(d)
120 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 160932 Infineon Technologies IRFB4110PBF MOSFET 1 N-channel 370 W TO 220AB
User & Safety Instructions
User & Safety Instructions 160932 Infineon Technologies IRFB4110PBF MOSFET 1 N-channel 370 W TO 220AB