Infineon Technologies IRFL4105PBF-GURT MOSFET 1 N-channel 2.1 W SOT 223
EAN:
Part number:
Item no:
Enclosure
SOT 223
Type
N-channel
Power (max) P(TOT)
2.1 W
R(DS)(on)
0.045 Ω
Mounting type
Surface-mount
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
3
-
€ 0.72335
9
8% = € 0.06
€ 0.66513
15
11% = € 0.08
€ 0.64183
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 3
Total (€ 0.72335 / piece)
€ 2.17
plus VAT.
Technical specifications
- Type
IRFL4105PBF-GURT
- Enclosure
SOT 223
- Manufacturer
Infineon Technologies
- Type
N-channel
- UBR DSS
55 V
- Power (max) P(TOT)
2.1 W
- R(DS)(on)
0.045 Ω
- Mounting type
Surface-mount
- Channels
1
- Content
1 pc(s)
- I(d)
5.2 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 3026456 Infineon Technologies IRFL4105PBF-GURT MOSFET 1 N-channel 2.1 W SOT 223
User & Safety Instructions
User & Safety Instructions 3026456 Infineon Technologies IRFL4105PBF-GURT MOSFET 1 N-channel 2.1 W SOT 223