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Infineon Technologies IRLB3813PBF MOSFET 1 N-channel 230 W TO 220AB
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Part number:
Item no:
Enclosure
TO 220AB
Type
N-channel
Power (max) P(TOT)
230 W
R(DS)(on)
1.95 mΩ
R(DS)(on) reference current
60 A
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 2.51
10
7% = € 0.18
€ 2.33
25
10% = € 0.26
€ 2.25
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€ 2.51
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Technical specifications
- Type
IRLB3813PBF
- Enclosure
TO 220AB
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Type
N-channel
- UBR DSS
30 V
- Power (max) P(TOT)
230 W
- R(DS)(on)
1.95 mΩ
- R(DS)(on) reference current
60 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
2.35 V
- U(GS)(th) reference current (max.)
150 µA
- Q(G)
86 nC
- Q(G) reference voltage
4.5 V
- C(ISS)
8420 pF
- C(ISS) reference voltage
15 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Series
HEXFET®
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
30 V
- Channels
1
- Content
1 pc(s)
- I(d)
260 A
- Product type
MOSFET
Documents & Downloads
Datasheet
Datasheet 161164 Infineon Technologies IRLB3813PBF MOSFET 1 N-channel 230 W TO 220AB
User & Safety Instructions
User & Safety Instructions 161164 Infineon Technologies IRLB3813PBF MOSFET 1 N-channel 230 W TO 220AB