
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 0.08
90
-
€ 0.08
150
12% = € 0.01
€ 0.07
Volume discounts vary depending on the seller
You save € 0.00
Number
Total (€ 0.08 / piece)
€ 0.09
-11 %
€ 0.08
plus VAT.
14-day return policy included
Technical specifications
- Packaging type
Tape cut
- Type
BC859C
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 23 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
PNP
- Collector current
-100 mA
- Collector emitter voltage U(CEO)
-30 V
- Collector-emitter saturation voltage (max.)
-650 mV
- Collector cutoff current
-15 nA
- Power (max) P(TOT)
330 mW
- DC current gain (hFE)
420
- DC current gain hFE - reference current
-2 mA
- DC current gain hFE - reference voltage
-5 V
- Transit frequency f(T)
250 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
PNP
Documents & Downloads
Datasheet
Datasheet 153145 Infineon Technologies Transistor (BJT) - Discrete BC859C SOT 23 3 No. of channels 1 PNP Tape cut
User & Safety Instructions
User & Safety Instructions 153145 Infineon Technologies Transistor (BJT) - Discrete BC859C SOT 23 3 No. of channels 1 PNP Tape cut
Description
PNP-Transistor

