
Infineon Technologies Transistor (BJT) - Discrete BCV47E6327 SOT 23 3 No. of channels 1 NPN - Darlington Tape cut
Number
Technical specifications
- Packaging type
Tape cut
- Type
BCV47E6327
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 23 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
NPN - Darlington
- Collector current
500 mA
- Collector emitter voltage U(CEO)
60 V
- Collector-emitter saturation voltage (max.)
1 V
- Collector cutoff current
100 nA
- Power (max) P(TOT)
360 mW
- DC current gain (hFE)
10000
- DC current gain hFE - reference current
100 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
170 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
NPN
Documents & Downloads
Datasheet
Datasheet 152975 Infineon Technologies Transistor (BJT) - Discrete BCV47E6327 SOT 23 3 No. of channels 1 NPN - Darlington Tape cut
User & Safety Instructions
User & Safety Instructions 152975 Infineon Technologies Transistor (BJT) - Discrete BCV47E6327 SOT 23 3 No. of channels 1 NPN - Darlington Tape cut

