Image similar
Image similar
Infineon Technologies Transistor (BJT) - Discrete BCW60D SOT 23 3 No. of channels 1 NPN Tape cut
EAN:
Part number:
Item no:
Packaging type
Tape cut
Enclosure
SOT 23 3
Type
NPN
Collector current
100 mA
Collector emitter voltage U(CEO)
32 V
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
-
€ 0.07
50
14% = € 0.01
€ 0.06
100
29% = € 0.02
€ 0.05
Volume discounts vary depending on the seller
You save € 0.00
Total (€ 0.07 / piece)
€ 0.07
plus VAT.
Technical specifications
- Packaging type
Tape cut
- Type
BCW60D
- Enclosure
SOT 23 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
NPN
- Collector current
100 mA
- Collector emitter voltage U(CEO)
32 V
- Collector-emitter saturation voltage (max.)
550 mV
- Collector cutoff current
20 nA
- Power (max) P(TOT)
330 mW
- DC current gain (hFE)
380
- DC current gain hFE - reference current
2 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
250 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 153028 Infineon Technologies Transistor (BJT) - Discrete BCW60D SOT 23 3 No. of channels 1 NPN Tape cut
Description
NPN transistor (8 mm tape)