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Infineon Technologies Transistor (BJT) - Discrete BCX70GE6327 SOT 23 3 No. of channels 1 NPN Tape cut
EAN:
Part number:
Item no:
Packaging type
Tape cut
Enclosure
SOT 23 3
Type
NPN
Collector current
100 mA
Collector emitter voltage U(CEO)
45 V
Number
Minimum order quantity: 50
Total (€ 0.05 / piece)
€ 2.50
plus VAT.
Technical specifications
- Packaging type
Tape cut
- Type
BCX70GE6327
- Enclosure
SOT 23 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
NPN
- Collector current
100 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
550 mV
- Collector cutoff current
20 nA
- Power (max) P(TOT)
330 mW
- DC current gain (hFE)
120
- DC current gain hFE - reference current
2 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
250 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Description
NPN transistor (8 mm tape)