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Infineon Technologies Transistor (BJT) - Discrete, bias voltage BCR135 TO 236 3 No. of channels 1 NPN - biased Tape cut
EAN:
Part number:
Item no:
Packaging type
Tape cut
Enclosure
TO 236 3
Type
NPN - biased
Collector current
100 mA
Collector emitter voltage U(CEO)
50 V
Datasheet (PDF)
Technical specifications
- Packaging type
Tape cut
- Type
BCR135
- Enclosure
TO 236 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
NPN - biased
- Collector current
100 mA
- Collector emitter voltage U(CEO)
50 V
- Collector-emitter saturation voltage (max.)
300 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
200 mW
- DC current gain (hFE)
70
- DC current gain hFE - reference current
5 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
150 MHz
- Resistance R1
10 kΩ
- Resistance R2
47 kΩ
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete, bias voltage
Documents & Downloads
Datasheet
Datasheet 153078 Infineon Technologies Transistor (BJT) - Discrete, bias voltage BCR135 TO 236 3 No. of channels 1 NPN - biased Tape cut
Description
NPN digital transistor