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Nexperia Transistor (BJT) - Discrete BST52,115 SOT 89 3 No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Enclosure
SOT 89 3
Type
NPN - Darlington
Collector current
1 A
Collector emitter voltage U(CEO)
80 V
Power (max) P(TOT)
1.3 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
100
-
€ 1.50
300
7% = € 0.11
€ 1.39
500
11% = € 0.16
€ 1.34
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Number
Minimum order quantity: 100
Multiple: 100
Total (€ 1.50 / piece)
€ 150.00
plus VAT.
Technical specifications
- Type
BST52,115
- Enclosure
SOT 89 3
- Manufacturer
Nexperia
- Manuf. code
NEX
- Channels
1
- Type
NPN - Darlington
- Collector current
1 A
- Collector emitter voltage U(CEO)
80 V
- Collector-emitter saturation voltage (max.)
1.3 V
- Collector cutoff current
50 nA
- Power (max) P(TOT)
1.3 W
- DC current gain (hFE)
2000
- DC current gain hFE - reference current
500 mA
- DC current gain hFE - reference voltage
10 V
- Transit frequency f(T)
200 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 1113277 Nexperia Transistor (BJT) - Discrete BST52,115 SOT 89 3 No. of channels 1 NPN - Darlington