Image similar
Image similar
ON Semiconductor FDC6561AN MOSFET 2 N-channel 700 mW SOT 23 6
EAN:
Part number:
Item no:
Enclosure
SOT 23 6
Type
N-channel
Power (max) P(TOT)
700 mW
R(DS)(on)
95 mΩ
R(DS)(on) reference current
2.5 A
Quantity (Piece(s))
Savings
Package size (plus VAT.)
5
-
€ 0.75
15
8% = € 0.06
€ 0.69
25
12% = € 0.09
€ 0.66
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 5
Total (€ 0.75 / piece)
€ 3.75
plus VAT.
Technical specifications
- Type
FDC6561AN
- Enclosure
SOT 23 6
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Type
N-channel
- UBR DSS
30 V
- Power (max) P(TOT)
700 mW
- R(DS)(on)
95 mΩ
- R(DS)(on) reference current
2.5 A
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
3 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
3.2 nC
- Q(G) reference voltage
5 V
- C(ISS)
220 pF
- C(ISS) reference voltage
15 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Series
PowerTrench®
- Operating temperature (max.)
+150 °C
- Transistor property
Logic level gate
- U(DSS)
30 V
- Channels
2
- Content
1 pc(s)
- I(d)
2.5 A
- Product type
MOSFET
Documents & Downloads
User & Safety Instructions
User & Safety Instructions 1263375 ON Semiconductor FDC6561AN MOSFET 2 N-channel 700 mW SOT 23 6