Image similar
Image similar
ON Semiconductor FDV301N MOSFET 1 N-channel 350 mW SOT 23 3
EAN:
Part number:
Item no:
Enclosure
SOT 23 3
Type
N-channel
Power (max) P(TOT)
350 mW
R(DS)(on)
4 Ω
R(DS)(on) reference current
400 mA
Quantity (Piece(s))
Savings
Package size (plus VAT.)
15
-
€ 0.13
45
8% = € 0.01
€ 0.12
75
15% = € 0.02
€ 0.11
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 15
Total (€ 0.13 / piece)
€ 1.95
plus VAT.
Technical specifications
- Type
FDV301N
- Enclosure
SOT 23 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Type
N-channel
- UBR DSS
25 V
- Power (max) P(TOT)
350 mW
- R(DS)(on)
4 Ω
- R(DS)(on) reference current
400 mA
- R(DS)(on) reference voltage
4.5 V
- U(GS)(th) max.
1.06 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
0.7 nC
- Q(G) reference voltage
4.5 V
- C(ISS)
9.5 pF
- C(ISS) reference voltage
10 V
- Operating temperature (min.)
-55 °C
- Mounting type
Surface-mount
- Operating temperature (max.)
+150 °C
- Transistor property
Logic level gate
- U(DSS)
25 V
- Channels
1
- Content
1 pc(s)
- I(d)
220 mA
- Product type
MOSFET
Documents & Downloads
User & Safety Instructions
User & Safety Instructions 1264012 ON Semiconductor FDV301N MOSFET 1 N-channel 350 mW SOT 23 3