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ON Semiconductor GBPC3510 Diode bridge GBPC 1000 V 35 A 1-phase
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Technical specifications
- Type
GBPC3510
- Enclosure
GBPC
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Configuration (diode)
1-phase
- U(RRM)
1000 V
- Forward current I(F)
35 A
- Forward voltage U(F)
1.1 V
- Forward voltage reference
17.5 A
- I(FSM) 60Hz
400 A
- Reverse leakage current I(r)
5 µA
- Reverse leakage current I(r) reference
1000 V
- Operating temperature (min.)
-55 °C
- Operating temperature (max.)
+150 °C
- Mounting type
Enclosure
- Type
GBPC3510
- Casing
GBPC
- Product type
Diode bridge
Documents & Downloads
User & Safety Instructions
User & Safety Instructions 563874 ON Semiconductor GBPC3510 Diode bridge GBPC 1000 V 35 A 1-phase
Description
Rectifiers from leading manufacturers. Full details free to download from our comprehensive product documents library.