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ON Semiconductor Transistor (BJT) - Discrete 2N5550TA TO 92 3 No. of channels 1 NPN
EAN:
Part number:
Item no:
Enclosure
TO 92 3
Type
NPN
Collector current
600 mA
Collector emitter voltage U(CEO)
140 V
Power (max) P(TOT)
625 mW
Datasheet (PDF)
Number
Minimum order quantity: 30
Total (€ 0.05 / piece)
€ 1.50
plus VAT.
Technical specifications
- Type
2N5550TA
- Enclosure
TO 92 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN
- Collector current
600 mA
- Collector emitter voltage U(CEO)
140 V
- Collector-emitter saturation voltage (max.)
250 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
625 mW
- DC current gain (hFE)
60
- DC current gain hFE - reference current
10 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
300 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 165905 ON Semiconductor Transistor (BJT) - Discrete 2N5550TA TO 92 3 No. of channels 1 NPN
User & Safety Instructions
User & Safety Instructions 165905 ON Semiconductor Transistor (BJT) - Discrete 2N5550TA TO 92 3 No. of channels 1 NPN