Buy ON Semiconductor Transistor (BJT) - Discrete BCV27 SOT 23 3 No. of channels 1 NPN - Darlington

Two black electronic components in rectangular form with metal contacts, likely SMD diodes, on a white background.

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Enclosure

SOT 23 3

Type

NPN - Darlington

Collector current

1.2 A

Collector emitter voltage U(CEO)

30 V

Power (max) P(TOT)

350 mW

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Technical specifications

Type: BCV27

Enclosure: SOT 23 3

Manufacturer: ON Semiconductor

Manuf. code: OnS

Channels: 1

Type: NPN - Darlington

Collector current: 1.2 A

Collector emitter voltage U(CEO): 30 V

Collector-emitter saturation voltage (max.): 1 V

Collector cutoff current: 100 nA

Power (max) P(TOT): 350 mW

DC current gain (hFE): 20000

DC current gain hFE - reference current: 100 mA

DC current gain hFE - reference voltage: 5 V

Transit frequency f(T): 220 MHz

Mounting type: Surface-mount

Content: 1 pc(s)

Product type: Transistor (BJT) - Discrete

Variants(All information is without VAT, plus shipping costs)

Enclosure

Collector current

Collector emitter voltage U(CEO)

Power (max) P(TOT)

Type

Product type

Mounting type

ON Semiconductor Transistor (BJT) - Discrete BCV27 SOT 23 3 No. of channels 1 NPN - Darlington

Item no:1263015

This article

SOT 23 3

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