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ON Semiconductor Transistor (BJT) - Discrete MJ11016G TO 3 No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Product type
Transistor (BJT) - Discrete
Enclosure
TO 3
Type
NPN - Darlington
Collector current
30 A
Collector emitter voltage U(CEO)
120 V
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
1
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€ 10.92
3
6% = € 0.61
€ 10.31
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€ 10.92
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Technical specifications
- Type
MJ11016G
- Product type
Transistor (BJT) - Discrete
- Enclosure
TO 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
NPN - Darlington
- Collector current
30 A
- Collector emitter voltage U(CEO)
120 V
- Collector-emitter saturation voltage (max.)
4 V
- Collector cutoff current
1 mA
- Power (max) P(TOT)
200 W
- DC current gain (hFE)
1000
- DC current gain hFE - reference current
20 A
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
4 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
Documents & Downloads
Datasheet
Datasheet 151307 ON Semiconductor Transistor (BJT) - Discrete MJ11016G TO 3 No. of channels 1 NPN - Darlington
User & Safety Instructions
User & Safety Instructions 151307 ON Semiconductor Transistor (BJT) - Discrete MJ11016G TO 3 No. of channels 1 NPN - Darlington