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ON Semiconductor Transistor (BJT) - Discrete MJ15004G TO 3 No. of channels 1 PNP
EAN:
Part number:
Item no:
Enclosure
TO 3
Type
PNP
Collector current
-20 A
Collector emitter voltage U(CEO)
-140 V
Power (max) P(TOT)
250 W
Datasheet (PDF)
Quantity (Piece(s))
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€ 7.55
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€ 7.09
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Technical specifications
- Type
MJ15004G
- Enclosure
TO 3
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Channels
1
- Type
PNP
- Collector current
-20 A
- Collector emitter voltage U(CEO)
-140 V
- Collector-emitter saturation voltage (max.)
-1 V
- Collector cutoff current
-250 µA
- Power (max) P(TOT)
250 W
- DC current gain (hFE)
25
- DC current gain hFE - reference current
-5 A
- DC current gain hFE - reference voltage
-2 V
- Transit frequency f(T)
2 MHz
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
PNP
- Type
MJ 15004
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 151169 ON Semiconductor Transistor (BJT) - Discrete MJ15004G TO 3 No. of channels 1 PNP
User & Safety Instructions
User & Safety Instructions 151169 ON Semiconductor Transistor (BJT) - Discrete MJ15004G TO 3 No. of channels 1 PNP