Buy STMicroelectronics DB3 = D30 = ER900 Thyristor (SCR) - DIAC DO 35 50 µA 32 V

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Electronic symbol and drawing of a diode. Dimensions: 26 mm, 3.9 mm, 26 mm, from left to right. Diode is represented by a line with an arrow.

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Enclosure

DO 35

Output voltages

5 V

Mounting type

Through-hole

Product type

Thyristor (SCR) - DIAC

Type

DB3 = D30 = ER900

Datasheet (PDF)

Fast track dispatch on Fri, 11 Sep

2370 Piece(s)

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Minimum order quantity: 30

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€ 2.40

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Technical specifications

Type: DB3 = D30 = ER900

Enclosure: DO 35

Manufacturer: STMicroelectronics

Manuf. code: STM

Gate trigger voltage U(GT): 32 V

Gate trigger current I(GT): 50 µA

Reverse leakage current I(r): 10 µA

Current peak output: 2 A

Slew rate: 2 µs

Output voltages: 5 V

Mounting type: Through-hole

Operating temperature (max.): +125 °C

Operating temperature (min.): -40 °C

Content: 1 pc(s)

Type: DB 3 (= D 30/ ER 900)

Casing: DO 3

Product type: Thyristor (SCR) - DIAC

Documents & Downloads

Datasheet

Datasheet 186406 STMicroelectronics DB3 = D30 = ER900 Thyristor (SCR) - DIAC DO 35 50 µA 32 V

User & Safety Instructions

User & Safety Instructions 186406 STMicroelectronics DB3 = D30 = ER900 Thyristor (SCR) - DIAC DO 35 50 µA 32 V

Description

Diode for AC current.

This text is machine translated.