Type SILHousing GBUPeriodic Peak Reverse Voltage - VRRM 1000 VContinuous current - IFAV 4.00 AJunction temperature - Tjmax 150 °CReverse delay time - trr: NsSurge current - IFSM 135.00 AForward voltage - VF 1.00 VIF 4.00 AReverse current - IR 5,000 µAVR 1000 VLock layer capacity - CJ 50 pFVR 4 V
Type
GBU4M-T
Product type
Diode bridge
Enclosure
GBU
Manufacturer
Diotec
Manuf. code
DIO
U(RRM)
1000 V
Forward current I(F)
4 A
Forward voltage U(F)
1 V
Forward voltage reference
4.00 A
I(FSM) 50Hz
135 A
I(FSM) 60Hz
135.00 A
Reverse leakage current I(r)
5 µA
Reverse leakage current I(r) reference
1000 V
Operating temperature (max.)
150 °C
Mounting type
Through-hole mounting
RoHS-compliant
Yes
Variants(All information include VAT, plus shipping costs)