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ON Semiconductor GBPC2510 Diode bridge GBPC 1000 V 25 A 1-phase
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Technical specifications
- Type
GBPC2510
- Enclosure
GBPC
- Manufacturer
ON Semiconductor
- Manuf. code
OnS
- Configuration (diode)
1-phase
- U(RRM)
1000 V
- Forward current I(F)
25 A
- Forward voltage U(F)
1.1 V
- Forward voltage reference
12.5 A
- I(FSM) 60Hz
300 A
- Reverse leakage current I(r)
5 µA
- Reverse leakage current I(r) reference
1000 V
- Operating temperature (min.)
-55 °C
- Operating temperature (max.)
+150 °C
- Mounting type
Enclosure
- Type
GBPC2510
- Casing
GBPC-4
- Product type
Diode bridge
Description
Rectifiers from leading manufacturers. Full details free to download from our comprehensive product documents library.