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Vishay IRFD110PBF MOSFET 1 N-channel 1.3 W DIP 4
EAN:
Part number:
Item no:
Product type
MOSFET
Enclosure
DIP 4
Type
N-channel
Power (max) P(TOT)
1.3 W
R(DS)(on)
540 mΩ
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
5
-
€ 0.54
15
7% = € 0.04
€ 0.50
25
11% = € 0.06
€ 0.48
Volume discounts vary depending on the seller
You save € 0.00
Total (€ 0.54 / piece)
€ 0.83
-35 %
€ 2.70
plus VAT.
14-day return policy included
Technical specifications
- Type
IRFD110PBF
- Product type
MOSFET
- Enclosure
DIP 4
- Manufacturer
Vishay
- Manuf. code
VIS
- Type
N-channel
- I(d)
1 A
- UBR DSS
100 V
- Power (max) P(TOT)
1.3 W
- R(DS)(on)
540 mΩ
- R(DS)(on) reference current
600 mA
- R(DS)(on) reference voltage
10 V
- U(GS)(th) max.
4 V
- U(GS)(th) reference current (max.)
250 µA
- Q(G)
8.3 nC
- Q(G) reference voltage
10 V
- C(ISS)
180 pF
- C(ISS) reference voltage
25 V
- Operating temperature (min.)
-55 °C
- Mounting type
Through-hole
- Operating temperature (max.)
+175 °C
- Transistor property
Standard
- U(DSS)
100 V
- Channels
1
- RoHS-compliant
- Content
1 pc(s)
- Type
N channel
- Description
100 V/1 A
- Casing
DIP-4
Documents & Downloads
Datasheet
Datasheet 162582 Vishay IRFD110PBF MOSFET 1 N-channel 1.3 W DIP 4
Datasheet 162582 Vishay IRFD110PBF MOSFET 1 N-channel 1.3 W DIP 4
User & Safety Instructions
User & Safety Instructions 162582 Vishay IRFD110PBF MOSFET 1 N-channel 1.3 W DIP 4