Type SILGBI housingPeriodic Peak Reverse Voltage - VRRM 400 VContinuous current - IFAV 10.00 AJunction temperature - Tjmax 150 °CReverse delay time - trr: NsSurge current - IFSM 180.00 AForward voltage - VF: VIF AReverse current - IR 5,000 µAVR 400 VLock layer capacity - CJ: PFVR V
Type
GBI10G
Product type
Diode bridge
Enclosure
GBI
Manufacturer
Diotec
Manuf. code
DIO
U(RRM)
400 V
I(FSM) 50Hz
180 A
I(FSM) 60Hz
180.00 A
Reverse leakage current I(r)
5 µA
Reverse leakage current I(r) reference
400 V
Operating temperature (max.)
150 °C
Mounting type
Through-hole mounting
RoHS-compliant
Yes
UKCA
yes
Variants(All information include VAT, plus shipping costs)