Bridge, single phase, GBS_SIL-1.5-2.3, 800V, 4A, 150 °C.
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Technical specifications
Type SILHousing: GBS_SIL-1.5-2.3Periodic Peak Reverse Voltage - VRRM 800 VContinuous current - IFAV 4.00 AJunction temperature - Tjmax 150 °CReverse delay time - trr: NsSurge current - IFSM 80.00 AForward voltage - VF 1.05 VIF 2.00 AReverse current - IR 5,000 µAVR 800 VLock layer capacity - CJ: PFVR V
Type
GBS4K
Product type
Diode bridge
Enclosure
GBS_SIL-1.5-2.3
Manufacturer
Diotec
Manuf. code
DIO
U(RRM)
800 V
Forward current I(F)
2 A
Forward voltage U(F)
15 V
Forward voltage reference
2.00 A
I(FSM) 50Hz
80 A
I(FSM) 60Hz
80.00 A
Reverse leakage current I(r)
5 µA
Reverse leakage current I(r) reference
800 V
Operating temperature (max.)
150 °C
Mounting type
Through-hole mounting
RoHS-compliant
Yes
Variants(All information include VAT, plus shipping costs)
U(RRM)
Diotec GBS4K Diode bridge GBS_SIL-1.5-2.3 800 V 2 A