Stroke drawing/circuit diagram
Infineon Technologies DF10S Diode bridge EDIP 4 1000 V 1 A 1-phase
Product type
Diode bridge
Enclosure
EDIP 4
Configuration (diode)
1-phase
U(RRM)
1000 V
Forward current I(F)
1 A
Datasheet (PDF)
EAN:
Part number:
Item no:
Number
Minimum order quantity: 7
Total (€ 0.52 / piece)
€ 3.64
incl. VAT
14-day return policy included
Technical specifications
- Type
DF10S
- Product type
Diode bridge
- Enclosure
EDIP 4
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Configuration (diode)
1-phase
- U(RRM)
1000 V
- Forward current I(F)
1 A
- Forward voltage U(F)
1 V
- Forward voltage reference
1 A
- I(FSM) 50Hz
30 A
- I(FSM) 60Hz
31 A
- Reverse leakage current I(r)
5 µA
- Reverse leakage current I(r) reference
1000 V
- Series
DF
- Operating temperature (min.)
-55 °C
- Operating temperature (max.)
+150 °C
- Mounting type
Through-hole
- Type
Bridge, Single Phase
- Description
1000 V/1.0 A
Documents & Downloads
Datasheet
Datasheet 164158 Infineon Technologies DF10S Diode bridge EDIP 4 1000 V 1 A 1-phase
User & Safety Instructions
User & Safety Instructions 164158 Infineon Technologies DF10S Diode bridge EDIP 4 1000 V 1 A 1-phase
Description
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