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STMicroelectronics Transistor (BJT) - Discrete BDX53B TO 220AB No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
NPN - Darlington
Collector current
8 A
Collector emitter voltage U(CEO)
80 V
Power (max) P(TOT)
60 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
7
-
€ 0.58
21
9% = € 0.05
€ 0.53
35
12% = € 0.07
€ 0.51
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 7
Total (€ 0.58 / piece)
€ 0.74
-22 %
€ 4.06
plus VAT.
Technical specifications
- Type
BDX53B
- Enclosure
TO 220AB
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN - Darlington
- Collector current
8 A
- Collector emitter voltage U(CEO)
80 V
- Collector-emitter saturation voltage (max.)
2 V
- Collector cutoff current
500 µA
- Power (max) P(TOT)
60 W
- DC current gain (hFE)
750
- DC current gain hFE - reference current
3 A
- DC current gain hFE - reference voltage
3 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 151083 STMicroelectronics Transistor (BJT) - Discrete BDX53B TO 220AB No. of channels 1 NPN - Darlington
User & Safety Instructions
User & Safety Instructions 151083 STMicroelectronics Transistor (BJT) - Discrete BDX53B TO 220AB No. of channels 1 NPN - Darlington