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STMicroelectronics Transistor (BJT) - Discrete BDX53C TO 220AB No. of channels 1 NPN - Darlington
EAN:
Part number:
Item no:
Enclosure
TO 220AB
Type
NPN - Darlington
Collector current
8 A
Collector emitter voltage U(CEO)
100 V
Power (max) P(TOT)
60 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
5
-
€ 0.77
15
8% = € 0.06
€ 0.71
25
10% = € 0.08
€ 0.69
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 5
Total (€ 0.77 / piece)
€ 3.85
plus VAT.
Technical specifications
- Type
BDX53C
- Enclosure
TO 220AB
- Manufacturer
STMicroelectronics
- Manuf. code
STM
- Channels
1
- Type
NPN - Darlington
- Collector current
8 A
- Collector emitter voltage U(CEO)
100 V
- Collector-emitter saturation voltage (max.)
2 V
- Collector cutoff current
500 µA
- Power (max) P(TOT)
60 W
- DC current gain (hFE)
750
- DC current gain hFE - reference current
3 A
- DC current gain hFE - reference voltage
3 V
- Mounting type
Through-hole
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 168106 STMicroelectronics Transistor (BJT) - Discrete BDX53C TO 220AB No. of channels 1 NPN - Darlington
User & Safety Instructions
User & Safety Instructions 168106 STMicroelectronics Transistor (BJT) - Discrete BDX53C TO 220AB No. of channels 1 NPN - Darlington
Description
Manufacturer SIE=INF,HAR=FSC,MOT=ONS.