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Infineon Technologies Transistor (BJT) - Discrete BCV27 SOT 23-3 No. of channels 1 NPN - Darlington Tape cut
EAN:
Part number:
Item no:
Packaging type
Tape cut
Enclosure
SOT 23-3
Type
NPN - Darlington
Collector current
500 mA
Collector emitter voltage U(CEO)
30 V
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
20
-
€ 0.13
60
8% = € 0.01
€ 0.12
100
15% = € 0.02
€ 0.11
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 20
Total (€ 0.13 / piece)
€ 0.18
-28 %
€
Technical specifications
- Packaging type
Tape cut
- Type
BCV27
- Enclosure
SOT 23-3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
NPN - Darlington
- Collector current
500 mA
- Collector emitter voltage U(CEO)
30 V
- Collector-emitter saturation voltage (max.)
1 V
- Collector cutoff current
100 nA
- Power (max) P(TOT)
360 mW
- DC current gain (hFE)
20000
- DC current gain hFE - reference current
100 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
170 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 152922 Infineon Technologies Transistor (BJT) - Discrete BCV27 SOT 23-3 No. of channels 1 NPN - Darlington Tape cut
Description
NPN transistor (8 mm tape)