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Infineon Technologies Transistor (BJT) - Discrete BCV27 SOT 23 3 No. of channels 1 NPN - Darlington Tape cut

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Packaging type
Tape cut
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 23 3
Type
NPN - Darlington
Collector current
500 mA
Datasheet (PDF)
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Minimum order quantity: 20
Total (€ 0.16 / piece)
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Technical specifications

Packaging type

Tape cut

Type

BCV27

Product type

Transistor (BJT) - Discrete

Enclosure

SOT 23 3

Manufacturer

Infineon Technologies

Manuf. code

INF

Channels

1

Type

NPN - Darlington

Collector current

500 mA

Collector emitter voltage U(CEO)

30 V

Collector-emitter saturation voltage (max.)

1 V

Collector cutoff current

100 nA

Power (max) P(TOT)

360 mW

DC current gain (hFE)

20000

DC current gain hFE - reference current

100 mA

DC current gain hFE - reference voltage

5 V

Transit frequency f(T)

170 MHz

Mounting type

Surface-mount

Content

1 pc(s)

Type

NPN

Documents & Downloads

Datasheet

Datasheet 152922 Infineon Technologies Transistor (BJT) - Discrete BCV27 SOT 23 3 No. of channels 1 NPN - Darlington Tape cut

Description

NPN transistor (8 mm tape)

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