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Diotec Transistor (BJT) - Discrete 2N5551 TO 92 NPN
Part number:
Item no:
Enclosure
TO 92
Type
NPN
Collector current
600 mA
Collector emitter voltage U(CEO)
160 V
Power (max) P(TOT)
0.625 W
Datasheet (PDF)
1487 Piece(s)
Sales and shipping:
Quantity (Piece(s))
Savings
Package size (plus VAT.)
100
-
€ 0.03733
300
9% = € 0.00
€ 0.03392
500
13% = € 0.00
€ 0.03257
Volume discounts vary depending on the seller
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Number
Minimum order quantity: 100
Total (€ 0.03733 / piece)
€
Technical specifications
- Type
2N5551
- Enclosure
TO 92
- Manufacturer
Diotec
- Type
NPN
- Collector current
600 mA
- Collector emitter voltage U(CEO)
160 V
- Collector-emitter saturation voltage (max.)
200 mV
- Power (max) P(TOT)
0.625 W
- DC current gain (hFE)
80
- Transit frequency f(T)
100 MHz
- Mounting type
Through-hole mounting
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 2808998 Diotec Transistor (BJT) - Discrete 2N5551 TO 92 NPN