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Diotec Transistor (BJT) - Discrete BC817-25 SOT 23 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 23
Type
NPN
Collector current
800 mA
Collector emitter voltage U(CEO)
45 V
Datasheet (PDF)
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Minimum order quantity: 1000
Total (€ 0.02622 / piece)
€ 0.03
incl. VAT
14-day return policy included
Technical specifications
- Type SMDSOT-23 housingCollector emitter voltage - VCEO 45 VDC collector current - IC: 800 mAPolarity - pin: NPNJunction temperature - Tjmax 150 °CPower loss - Ptot 0,310 W.Collector base current ratio - hfe: 250VCE 1 VIC 100 mACollector saturation voltage - VCEsat 700 mVIC 500 mAIB 50 mATransit frequency - ft:100 MHzIC 10 mAVCE 5 VF 50 MHz
- Type
BC817-25
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 23
- Manufacturer
Diotec
- Type
NPN
- Collector current
800 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
700 mV
- Power (max) P(TOT)
0.31 W
- DC current gain (hFE)
250
- Transit frequency f(T)
50 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- UKCA
yes
Documents & Downloads
Datasheet
Datasheet 2809195 Diotec Transistor (BJT) - Discrete BC817-25 SOT 23 NPN
User & Safety Instructions
User & Safety Instructions 2809195 Diotec Transistor (BJT) - Discrete BC817-25 SOT 23 NPN
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