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Diotec Transistor (BJT) - Discrete BC847S SOT 363 NPN
Part number:
Item no:
Enclosure
SOT 363
Type
NPN
Collector current
100 mA
Collector emitter voltage U(CEO)
45 V
Power (max) P(TOT)
0.25 W
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
750
-
€ 0.03571
2250
9% = € 0.00
€ 0.03246
3750
13% = € 0.00
€ 0.03116
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 750
Total (€ 0.03571 / piece)
€ 26.78
plus VAT.
Highlights & Details
BJT, SOT-363, 45V, 100MA, NPN
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Technical specifications
- Type SMDSOT-363 housingCollector emitter voltage - VCEO 45 VDC collector current - IC: 100 mAPolarity - pin: NPNJunction temperature - Tjmax 150 °CPower loss - Ptot 0,250 W.Collector base current ratio - hfe: 270VCE 5 VIC 2 mACollector saturation voltage - VCEsat 650 mVIC 100 mAIB 5 mATransit frequency - ft:100 MHzIC 10 mAVCE 5 VF 100 MHz
- Type
BC847S
- Enclosure
SOT 363
- Manufacturer
Diotec
- Type
NPN
- Collector current
100 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
650 mV
- Power (max) P(TOT)
0.25 W
- DC current gain (hFE)
270
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 2809238 Diotec Transistor (BJT) - Discrete BC847S SOT 363 NPN