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Diotec Transistor (BJT) - Discrete BCM847BS SOT 363 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 363
Type
NPN
Collector current
100 mA
Collector emitter voltage U(CEO)
45 V
Datasheet (PDF)
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Minimum order quantity: 250
Total (€ 0.10486 / piece)
€ 26.22
incl. VAT
14-day return policy included
Technical specifications
- Type
BCM847BS
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 363
- Manufacturer
Diotec
- Type
NPN
- Collector current
100 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
650 mV
- Power (max) P(TOT)
0.25 W
- DC current gain (hFE)
270
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- UKCA
yes
Documents & Downloads
Datasheet
Datasheet 2809306 Diotec Transistor (BJT) - Discrete BCM847BS SOT 363 NPN
User & Safety Instructions
User & Safety Instructions 2809306 Diotec Transistor (BJT) - Discrete BCM847BS SOT 363 NPN
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