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Diotec Transistor (BJT) - Discrete BCP55-10 SOT 223 NPN
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 223
Type
NPN
Collector current
1000 mA
Collector emitter voltage U(CEO)
60 V
Datasheet (PDF)
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Part number:
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Minimum order quantity: 200
Total (€ 0.16059 / piece)
€ 0.16
incl. VAT
14-day return policy included
Highlights & Details
Transistor (BJT) - Discrete
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Technical specifications
- Type
BCP55-10
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 223
- Manufacturer
Diotec
- Type
NPN
- Collector current
1000 mA
- Collector emitter voltage U(CEO)
60 V
- Collector-emitter saturation voltage (max.)
500 mV
- Power (max) P(TOT)
2 W
- DC current gain (hFE)
63
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
Documents & Downloads
Datasheet
Datasheet 2809311 Diotec Transistor (BJT) - Discrete BCP55-10 SOT 223 NPN
User & Safety Instructions
User & Safety Instructions 2809311 Diotec Transistor (BJT) - Discrete BCP55-10 SOT 223 NPN
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