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Diotec Transistor (BJT) - Discrete MMBT5551 SOT 23 NPN
EAN:
Part number:
Item no:
Product type
Transistor (BJT) - Discrete
Enclosure
SOT 23
Type
NPN
Collector current
600 mA
Collector emitter voltage U(CEO)
160 V
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
100
-
€ 0.03203
300
9% = € 0.00
€ 0.02912
500
13% = € 0.00
€ 0.02795
Volume discounts vary depending on the seller
You save € 0.00
Number
Minimum order quantity: 100
Total (€ 0.03203 / piece)
€ 3.20
plus VAT.
Technical specifications
- Type
MMBT5551
- Product type
Transistor (BJT) - Discrete
- Enclosure
SOT 23
- Manufacturer
Diotec
- Type
NPN
- Collector current
600 mA
- Collector emitter voltage U(CEO)
160 V
- Collector-emitter saturation voltage (max.)
200 mV
- Power (max) P(TOT)
0.25 W
- DC current gain (hFE)
250
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- RoHS-compliant
Yes
- Content
1 pc(s)
- Operating temperature (max.)
150 °C
- UKCA
yes
Documents & Downloads
Datasheet
Datasheet 2810129 Diotec Transistor (BJT) - Discrete MMBT5551 SOT 23 NPN
User & Safety Instructions
User & Safety Instructions 2810129 Diotec Transistor (BJT) - Discrete MMBT5551 SOT 23 NPN