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Infineon Technologies Transistor (BJT) - Arrays, bias voltage BCR148S SOT 363 No. of channels 2 NPN - biased Tape cut
EAN:
Part number:
Item no:
Packaging type
Tape cut
Enclosure
SOT 363
Type
NPN - biased
Collector current
100 mA
Collector emitter voltage U(CEO)
50 V
Datasheet (PDF)
Quantity (Piece(s))
Savings
Package size (plus VAT.)
30
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€ 0.08
90
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€ 0.08
150
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€ 0.07
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Number
Minimum order quantity: 30
Total (€ 0.08 / piece)
€ 2.40
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Technical specifications
- Packaging type
Tape cut
- Type
BCR148S
- Enclosure
SOT 363
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
2
- Type
NPN - biased
- Collector current
100 mA
- Collector emitter voltage U(CEO)
50 V
- Collector-emitter saturation voltage (max.)
300 mV
- Power (max) P(TOT)
250 mW
- DC current gain (hFE)
70
- DC current gain hFE - reference current
5 mA
- DC current gain hFE - reference voltage
5 V
- Transit frequency f(T)
100 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
NPN
- Product type
Transistor (BJT) - Arrays, bias voltage
Documents & Downloads
Datasheet
Datasheet 154134 Infineon Technologies Transistor (BJT) - Arrays, bias voltage BCR148S SOT 363 No. of channels 2 NPN - biased Tape cut
Description
Double digital transistor array