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Infineon Technologies Transistor (BJT) - Discrete BC817K-40E6327 SOT 23 3 No. of channels 1 NPN Tape cut
EAN:
Part number:
Item no:
Packaging type
Tape cut
Enclosure
SOT 23 3
Type
NPN
Collector current
500 mA
Collector emitter voltage U(CEO)
45 V
Datasheet (PDF)
Number
Minimum order quantity: 30
Total (€ 0.05 / piece)
€ 1.50
plus VAT.
Technical specifications
- Packaging type
Tape cut
- Type
BC817K-40E6327
- Enclosure
SOT 23 3
- Manufacturer
Infineon Technologies
- Manuf. code
INF
- Channels
1
- Type
NPN
- Collector current
500 mA
- Collector emitter voltage U(CEO)
45 V
- Collector-emitter saturation voltage (max.)
700 mV
- Collector cutoff current
100 nA
- Power (max) P(TOT)
330 mW
- DC current gain (hFE)
250
- DC current gain hFE - reference current
100 mA
- DC current gain hFE - reference voltage
1 V
- Transit frequency f(T)
170 MHz
- Mounting type
Surface-mount
- Content
1 pc(s)
- Type
NPN
- Type
BC 817-40
- Product type
Transistor (BJT) - Discrete
Documents & Downloads
Datasheet
Datasheet 153076 Infineon Technologies Transistor (BJT) - Discrete BC817K-40E6327 SOT 23 3 No. of channels 1 NPN Tape cut
User & Safety Instructions
User & Safety Instructions 153076 Infineon Technologies Transistor (BJT) - Discrete BC817K-40E6327 SOT 23 3 No. of channels 1 NPN Tape cut
Description
NPN transistor (8 mm tape)